Atomic layer deposition of copper thin film using CuII(diketoiminate)2 and H2

Abstract

We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to Cu^II(diketoiminate)2 and H2. The influences of deposition temperature on the properties of the deposited film were investigated at 140–220°C. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180–200°C. The resistivity of 17-nm-thick ALD Cu film was ∼7 µΩ·cm.