Soft errors: Reliability challenges in energy-constrained ULP body sensor networks applications

H. Patel, B. Calhoun, R. Mann
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引用次数: 4

Abstract

Aggressive technology and supply voltage scaling has led to increasing concern for reliability. Optimizing power and energy with sub-threshold (sub-VT) operation exponentially increases the occurrences of both static and dynamic failures. With smaller node capacitances with each technology and supply scaling node, radiation-induced Single Event Upset (SEU) has become a critical design metric for Ultra-Low-Power (ULP) applications. In this paper, we explore the impact of radiation-induced soft errors on sub-threshold SRAM implemented in a Body Sensory Node (BSN) as an ULP application. We also demonstrate an exponential reduction in the critical charge (Qcrit) of a storage node with supply in near- and sub-VT design, resulting in a significant design consideration for the low-power applications. The huge process variation in sub-VT results in 3X Qcrit variation. Finally, we compare the trend of technology scaling and supply voltage scaling on Qcrit.
软误差:能量受限ULP身体传感器网络应用中的可靠性挑战
激进的技术和电源电压缩放导致人们越来越关注可靠性。优化功率和能量与亚阈值(亚vt)运行成倍增加静态和动态故障的发生率。随着每种技术和电源缩放节点的节点容量变小,辐射引起的单事件扰动(SEU)已成为超低功耗(ULP)应用的关键设计指标。在本文中,我们探讨了辐射引起的软误差对作为ULP应用的体感节点(BSN)实现的亚阈值SRAM的影响。我们还证明了在近和次vt设计中,具有电源的存储节点的临界电荷(Qcrit)呈指数级降低,从而为低功耗应用提供了重要的设计考虑。子vt中巨大的工艺变化导致了3X的Qcrit变化。最后,对Qcrit的技术缩放和电源电压缩放趋势进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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