{"title":"Soft errors: Reliability challenges in energy-constrained ULP body sensor networks applications","authors":"H. Patel, B. Calhoun, R. Mann","doi":"10.1109/IOLTS.2017.8046222","DOIUrl":null,"url":null,"abstract":"Aggressive technology and supply voltage scaling has led to increasing concern for reliability. Optimizing power and energy with sub-threshold (sub-VT) operation exponentially increases the occurrences of both static and dynamic failures. With smaller node capacitances with each technology and supply scaling node, radiation-induced Single Event Upset (SEU) has become a critical design metric for Ultra-Low-Power (ULP) applications. In this paper, we explore the impact of radiation-induced soft errors on sub-threshold SRAM implemented in a Body Sensory Node (BSN) as an ULP application. We also demonstrate an exponential reduction in the critical charge (Qcrit) of a storage node with supply in near- and sub-VT design, resulting in a significant design consideration for the low-power applications. The huge process variation in sub-VT results in 3X Qcrit variation. Finally, we compare the trend of technology scaling and supply voltage scaling on Qcrit.","PeriodicalId":233462,"journal":{"name":"2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2017.8046222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Aggressive technology and supply voltage scaling has led to increasing concern for reliability. Optimizing power and energy with sub-threshold (sub-VT) operation exponentially increases the occurrences of both static and dynamic failures. With smaller node capacitances with each technology and supply scaling node, radiation-induced Single Event Upset (SEU) has become a critical design metric for Ultra-Low-Power (ULP) applications. In this paper, we explore the impact of radiation-induced soft errors on sub-threshold SRAM implemented in a Body Sensory Node (BSN) as an ULP application. We also demonstrate an exponential reduction in the critical charge (Qcrit) of a storage node with supply in near- and sub-VT design, resulting in a significant design consideration for the low-power applications. The huge process variation in sub-VT results in 3X Qcrit variation. Finally, we compare the trend of technology scaling and supply voltage scaling on Qcrit.