Impact of thermal overload operation on wirebond and metallization reliability in smart power devices

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356542

M. Glavanovics, T. Detzel, K. Weber

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引用次数: 33

Abstract

It is well-known that continuous operation of semiconductors under electrical and thermal overload conditions leads to degradation and subsequently to device failure. This paper deals with wirebond and metallization degradation of integrated vertical DMOS switches that are stressed with periodic power dissipation pulses under laboratory conditions. The test setup is briefly described as well as the test results. Physical failure analysis proves that migration phenomena in the power metallization, as well as bond wire delamination, play a crucial role in device aging. A model of time to failure is derived from measured data. It implies that thermomechanical as well as electrical mechanisms contribute to final device failure. Several hypotheses are discussed, showing that the wirebond-metallization interface is most probably the weak point of power switch robustness. Further tasks will therefore include evaluating possible improvements on power metallization and bond connection reliability.

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智能电力设备中热过载运行对焊丝和金属化可靠性的影响

众所周知，半导体在电气和热过载条件下的持续运行会导致器件退化并随后导致器件故障。本文研究了在实验室条件下周期性功率耗散脉冲应力下集成垂直DMOS开关的线键和金属化退化问题。简要介绍了试验装置和试验结果。物理失效分析证明，功率金属化过程中的迁移现象和键合线分层是导致器件老化的重要原因。从测量数据中导出了失效时间模型。这意味着热机械和电气机构都是导致最终设备失效的原因。讨论了几个假设，表明线-金属化界面最有可能是功率开关稳健性的弱点。因此，进一步的任务将包括评估电力金属化和键连接可靠性的可能改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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