{"title":"Fully integrated reflector-based analog predistortion for Ku-band Power Amplifiers Linearization","authors":"N. Deltimple, Potereau Manuel, Ghiotto Anthony","doi":"10.1109/ESSCIRC53450.2021.9567737","DOIUrl":null,"url":null,"abstract":"This paper presents the analog predistortion abilities to linearize power amplifiers used in satellite and mobile applications. A design example is done in Ku-band downlink satellite communication application with an integrated reflector-based analog predistortion. The proposed solution implements two cells nonlinear load-based AM/AM and AM/PM generation circuits made in a 130nm BiCMOS technology. The measurements performed for different biasing voltages and at different frequencies result in a gain compensation range between 0 dB and 9 dB and a phase compensation range between 0 and 50°. The size of each cell is 0.2 mm2. The total maximum power consumption is as low as 9 mW.","PeriodicalId":129785,"journal":{"name":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC53450.2021.9567737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents the analog predistortion abilities to linearize power amplifiers used in satellite and mobile applications. A design example is done in Ku-band downlink satellite communication application with an integrated reflector-based analog predistortion. The proposed solution implements two cells nonlinear load-based AM/AM and AM/PM generation circuits made in a 130nm BiCMOS technology. The measurements performed for different biasing voltages and at different frequencies result in a gain compensation range between 0 dB and 9 dB and a phase compensation range between 0 and 50°. The size of each cell is 0.2 mm2. The total maximum power consumption is as low as 9 mW.