Getting to the bottom of deep submicron

D. Sylvester, K. Keutzer
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引用次数: 338

Abstract

We take a fresh look at the problems posed by deep submicron (DSM) geometries and re-open the investigation into how DSM effects are most likely to affect future design methodologies. We describe a comprehensive approach to accurately characterize the device and interconnect characteristics of present and future process generations. This approach results in the generation of a representative strawman technology that is used in conjunction with analytical model simulation tools and empirical design data to obtain a realistic picture of the future of circuit design. We then proceed to quantify the precise impact of interconnect, including delay degradation due to noise, on high performance ASIC designs. Having determined the role of interconnect in performance, we then reconsider the impact of future processes on ASIC design methodology.
深入亚微米的底层
我们重新审视深亚微米(DSM)几何形状所带来的问题,并重新调查DSM效应如何最有可能影响未来的设计方法。我们描述了一种全面的方法来准确地表征当前和未来工艺代的设备和互连特性。这种方法产生了一种具有代表性的斯特劳曼技术,该技术与分析模型仿真工具和经验设计数据结合使用,以获得电路设计未来的现实图景。然后,我们继续量化互连的精确影响,包括由于噪声引起的延迟退化,对高性能ASIC设计。确定互连在性能中的作用后,我们将重新考虑未来工艺对ASIC设计方法的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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