Novel fabrication method and structure of single crystal thin film In0.53Ga0.47As Schottky diodes for potential IR applications

Abstract

Due to their favorable properties, extensive efforts have been done to extend the applications of Schottky diodes into infrared (IR) nonlinear applications. Primarily, efforts have been concentrated in reducing their series resistances and their capacitances in order to increase their cutoff frequencies [1]. Here, we introduce novel single crystal thin film Au-In0.53Ga0.47As Schottky diodes, in which the thickness of the semiconductor is less than the depletion width in the diodes. This leads to a significantly reduced series resistance, which leads to a cutoff frequency of 25 THz. This value is among the highest values reported for Schottky diodes [2]. The diode structure is achieved using a novel film transfer method introduced by our group.