Influence of Calibration Methods and RF Probes on the RF Characterization of 28FD-SOI MOSFET

Abstract

This work focuses on the characterization of 28nm FD-SOI NMOS transistors, in order to study the effect of the calibration techniques employed and the overall measurement environment in the frequency range of 1 – 110 GHz. Comparison is made between the off-wafer SOLT calibration and on-wafer TRL calibration, both followed by de-embedding. The transistor as well as the Open and Short de-embedding structures are characterized to extract the transistor RF figure of merit fT, and the compact model parameters Cgg and gm. Measurements are also repeated with different RF probes (Cascade Infinity and Picoprobe). The results obtained are compared to simulations with the Leti-UTSOI2 model for FD-SOI and conclusions are drawn.