{"title":"A high-speed DDFS MMIC with frequency, phase and amplitude modulations in 65nm CMOS","authors":"Abdel Martinez Alonso, M. Miyahara, A. Matsuzawa","doi":"10.1109/ASSCC.2017.8240246","DOIUrl":null,"url":null,"abstract":"This paper describes a digital-mapping DDFS with a frequency tuning and amplitude resolutions of 24-bits and 10-bits respectively. This Si-CMOS-MMIC is the first solution supporting a sampling rate of 7GS/s and frequency, phase and amplitude modulations in the digital domain. It includes a 14-bits pipelined ripple-carry adder and a 10-bits high-speed multiplier for phase and amplitude modulations respectively. The worst case wideband/narrowband SFDR is 32dBc/42dBc. This system consumes 85.9mW/(GS/s) from a 1.2V power supply when the amplitude/phase modulations are enabled, resulting in a FoM of 469.6GS/s-2(SFDR/6)/W. A proof-of-concept chip with an active area of 0.23mm2 was characterized in LQFP packages.","PeriodicalId":438242,"journal":{"name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2017.8240246","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper describes a digital-mapping DDFS with a frequency tuning and amplitude resolutions of 24-bits and 10-bits respectively. This Si-CMOS-MMIC is the first solution supporting a sampling rate of 7GS/s and frequency, phase and amplitude modulations in the digital domain. It includes a 14-bits pipelined ripple-carry adder and a 10-bits high-speed multiplier for phase and amplitude modulations respectively. The worst case wideband/narrowband SFDR is 32dBc/42dBc. This system consumes 85.9mW/(GS/s) from a 1.2V power supply when the amplitude/phase modulations are enabled, resulting in a FoM of 469.6GS/s-2(SFDR/6)/W. A proof-of-concept chip with an active area of 0.23mm2 was characterized in LQFP packages.