Dynamically biased low power high performance 3.3V output buffer in a single well bulk CMOS 1.8V oxide 45nm process

K. Rajagopal
{"title":"Dynamically biased low power high performance 3.3V output buffer in a single well bulk CMOS 1.8V oxide 45nm process","authors":"K. Rajagopal","doi":"10.1109/ISQED.2012.6187489","DOIUrl":null,"url":null,"abstract":"Integration of legacy interfaces demand need for 3.3V I/Os in modern day SOCs. Low cost solutions exists by build 3.3V I/Os using specially biased 1.8V transistors imposing a serious limitation of trade-off between power, performance and reliability. This paper presents an I/O built using a dynamically biased differential amplifier based pre-driver circuit, with which excellent performance has been achieved up to 200MHz along with up to 30X reduction in power without compromise to reliability.","PeriodicalId":205874,"journal":{"name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2012.6187489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Integration of legacy interfaces demand need for 3.3V I/Os in modern day SOCs. Low cost solutions exists by build 3.3V I/Os using specially biased 1.8V transistors imposing a serious limitation of trade-off between power, performance and reliability. This paper presents an I/O built using a dynamically biased differential amplifier based pre-driver circuit, with which excellent performance has been achieved up to 200MHz along with up to 30X reduction in power without compromise to reliability.
动态偏置低功耗高性能3.3V输出缓冲器,单孔体CMOS 1.8V氧化物45nm工艺
在现代soc中,遗留接口的集成需要3.3V I/ o。低成本的解决方案是使用特别偏置的1.8V晶体管构建3.3V I/ o,这严重限制了功耗、性能和可靠性之间的权衡。本文提出了一种使用基于预驱动电路的动态偏置差分放大器构建的I/O,该电路在高达200MHz的频率下实现了优异的性能,同时在不影响可靠性的情况下降低了高达30倍的功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信