Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-02 DOI:10.1109/RADECS.2017.8696152

T. Allanche, V. Goiffon, S. Rizzolo, P. Paillet, O. Duhamel, A. Chabane, C. Muller, P. Magnan, F. Corbière, S. Rolando, Raphael Clerc, Emmanuel Marin, A. Boukenter, Y. Ouerdane, S. Girard

引用次数: 1

Abstract

For the first time we collect photo-current induce by X-Ray in a CMOS Image Sensor (CIS). From measurement from on a range from 20 to 119 keV, integration time from 0.135 ms to 1.35ms and dose rate from 30 Gy/h to 30 kGy/h we highlight effects of energy, dose rate and integration time. We demonstrate that as integration time near 1 ms and a dose rate of 30 kGy/h a CIS can acquire image with only 23% of is dynamic use by photo-generated electrons.

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辐射硬化CMOS图像传感器x射线光电荷诱导散斑分析

首次在CMOS图像传感器(CIS)上采集了x射线感应的光电流。测量范围从20到119kev，积分时间从0.135 ms到1.35ms，剂量率从30 Gy/h到30 kGy/h，我们强调了能量，剂量率和积分时间的影响。我们证明，当积分时间接近1 ms，剂量率为30 kGy/h时，CIS仅使用23%的光生电子动态使用即可获得图像。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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