Design and research of V-groove silicon avalanche electron emission array

Abstract

A V-groove structure is used to fabricate a silicon avalanche cathode (SAC). This novel structure for a SAC has a planar electron emission surface topology which reduces the channel current crowding effect and the current punch-through effect. The device structure and fabrication processing are described. A simple series resistance model and an effective electron emission area model are also discussed. A 12/spl times/12 cells arrayed device of this structure is designed and fabricated. Its I-V characteristics and emission characteristics are investigated, producing a better result than that of the traditional structure SAC.