MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase characteristics at low voltage operation. The presence of interface states and defects that originate from the nanocrystal formation process is also found to have a strong effect on the device transfer characteristics.