Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design

Abstract

Trade-off between threshold voltage and specific on-resistance is successfully overcome in a diode-integrated SiC MOSFET by improving the design of n-type epitaxial channel layer and p-type body region. This new design features enhanced transconductance, hence low on-state resistance, while retaining high threshold voltage. Obtained specific on-resistance of the fabricated 1200V SiC DioMOS is among the lowest achieved for SiC MOSFETs including trench devices. The transconductance enhancement is also demonstrated to be effective in increasing the turn-on switching speed, thus contributing to higher efficiency in power switching systems with reduced conduction and switching losses.