Electrical and structural properties of anodized porous silicon

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557350

M. Ciurea, A. Pentia, M. Lazar, A. Belu-Marian, F. Zavaliche, R. Mănăila

引用次数: 0

Abstract

The temperature dependence of the dark conductivity (between 150 and 300 K) and X-ray diffraction were measured on porous silicon with different porosities. It was found that the conduction mechanism depends on porosity. X-ray diffraction have revealed a lattice parameter increase, related to surface oxidation.

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阳极氧化多孔硅的电学和结构特性

测量了不同孔隙率多孔硅的暗电导率(150 ~ 300 K)和x射线衍射的温度依赖性。研究发现，导电机制与孔隙率有关。x射线衍射显示晶格参数增加，与表面氧化有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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