Effect of Annealing on the Thin Cu2Sn(Sx,Se1-x)3 Films deposited by Chemical Route

2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC) Pub Date : 2018-10-01 DOI:10.1109/AESPC44649.2018.9033240

Ankit Saha, P. Banerjee, Arindam Basak, U. Singh

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Abstract

Cu2Sn(SxSe1-x)3(CTSSe) thin films were deposited by chemical technique with varying annealingtime for its application in solar cell photovoltaic.Copper sulphate (CuSO4,5H2O), Tin sulphate (SnSO4), Sodium Thiosulphate (Na2S2O3) were used for this simple and efficient deposition process.The structural characteristics were studied by X-ray Diffractometry (XRD)as well asEnergy Dispersive X-ray Fluorescence (EDXRF)for the deposited CTSSe thin films. The XRD demonstrates the Crystallite size, Interplanar spacing, lattice constant and microstrain of CTSSe thin films.The deposited films show cubical structure with (111) orientation. The ED-XRF shows the composition of different elements present in the sample and the ratio in which they are present. The thickness is also determined for the CTSSe thin films. The results show that the annealing temperature and time has an impacton structural characteristics of the deposited CTSSe thin films.

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退火对化学法制备Cu2Sn(Sx,Se1-x)3薄膜的影响

采用不同退火时间的化学方法制备了Cu2Sn(SxSe1-x)3(CTSSe)薄膜，并将其应用于太阳能光伏电池。采用硫酸铜(CuSO4,5H2O)、硫酸锡(SnSO4)、硫代硫酸钠(Na2S2O3)进行了简单高效的沉积工艺。利用x射线衍射仪(XRD)和能量色散x射线荧光(EDXRF)对沉积的CTSSe薄膜的结构特征进行了研究。XRD表征了CTSSe薄膜的晶粒尺寸、面间距、晶格常数和微应变。沉积膜呈(111)取向的立方体结构。ED-XRF显示了样品中存在的不同元素的组成和它们存在的比例。测定了CTSSe薄膜的厚度。结果表明，退火温度和退火时间对CTSSe薄膜的结构特性有影响。

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2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC)

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