Transport in one-dimensional semiconductor devices

Abstract

A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts.