Effect of /spl gamma/-irradiation on photoluminescence of porous silicon

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557346

E. Astrova, V. V. Emtsev, A. Lebedev, D. Poloskin, A.D. Remenyuk, Y. Rud’, R. Vitman

引用次数: 0

Abstract

Properties of Porous Silicon (PS) subjected to gamma irradiation in an air ambient and in vacuum have been studied. Gamma-irradiation was carried out in usual room atmosphere, and in evacuated tubes. The samples of porous silicon were investigated by means of photoluminescence (PL) and infrared (IR) absorption. IR absorption measurements showed variations of the intensity of Si-H and Si-O bands with the irradiation dose.

查看原文本刊更多论文

/spl γ /-辐照对多孔硅光致发光的影响

研究了多孔硅(PS)在空气环境和真空环境下的辐照性能。伽马辐照是在通常的室内气氛和真空管中进行的。采用光致发光(PL)和红外吸收(IR)对多孔硅样品进行了研究。红外吸收测量显示Si-H和Si-O波段的强度随辐照剂量的变化而变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

自引率

0.00%

发文量