Diamond power devices - possbility of high voltage applicatios

S. Yamasaki, T. Matsumoto, K. Oyama, H. Kato, M. Ogura, D. Takeuchi, T. Makino, S. Nishizawa, H. Oohash, H. Okushi
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Abstract

As widely known, diamond has a higher break-down voltage than other semiconductor materials, 30 times than silicon and 3 times than silicon-carbide. Because of its superior property, diamond has a high potential of high voltage power devices. In addition diamond has unique properties, namely transport property of heavily doped material over 1020 cm−3, high density exciton being stable even at room temperature, negative electron affinity with hydrogen terminated surface, etc. We have fabricated diamond devices using these properties, such as ultraviolet light emitting diodes, a new type of diode with high breakdown voltage and low ON resistance, high current density flow diode using heavily doped layers, and so on. In this key note lecture, we show the recent achievements of these electronic devices and discuss the potential of diamond semiconductor as a high voltage power device.
金刚石动力装置。高压应用的可能性
众所周知,金刚石的击穿电压比其他半导体材料高,是硅的30倍,碳化硅的3倍。由于其优越的性能,金刚石在高压电源器件中具有很高的潜力。此外,金刚石具有独特的性质,即在1020 cm−3以上具有重掺杂材料的输运特性,高密度激子在室温下也能保持稳定,与端氢表面具有负电子亲和性等。我们利用这些特性制作了金刚石器件,如紫外发光二极管、高击穿电压和低导通电阻的新型二极管、使用重掺杂层的高电流密度流二极管等。在这个重点演讲中,我们展示了这些电子器件的最新成就,并讨论了金刚石半导体作为高压功率器件的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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