Noninvasive leakage power tomography of integrated circuits by compressive sensing

Davood Shamsi, P. Boufounos, F. Koushanfar
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引用次数: 23

Abstract

We introduce a new methodology for noninvasive post-silicon characterization of the unique static power profile (tomogram) of each manufactured chip. The total chip leakage is measured for multiple input vectors in a linear optimization framework where the unknowns are the gate leakage variations. We propose compressive sensing for fast extraction of the unknowns since the leakage tomogram contains correlations and can be sparsely represented. A key advantage of our approach is that it provides leakage variation estimates even for inaccessible gates. Experiments show that the methodology enables fast and accurate noninvasive extraction of leakage power characteristics.
基于压缩感知的集成电路无创泄漏功率层析成像
我们介绍了一种新的方法,用于对每个制造芯片的独特静态功率分布(层析成像)进行无创后硅表征。在线性优化框架中测量多个输入向量的总芯片泄漏,其中未知数是栅极泄漏变化。由于泄漏层析图包含相关性并且可以稀疏表示,因此我们提出压缩感知以快速提取未知数。我们的方法的一个关键优点是,它提供了泄漏变化的估计,即使是不可接近的门。实验表明,该方法能够快速、准确、无创地提取泄漏功率特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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