110 GHz amplifiers based on compact coplanar W-band receiver technology

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528997

N. Schlechtweg, W. Haydl, J. Braunstein, P. Tasker, A. Bangert, W. Reinert, L. Verweyen, H. Massler, J. Seibel, K. Zufle, W. Bronner, T. Fink, A. Hulsmann, P. Hofmann, G. Kaufel, K. Kohler, B. Raynor, J. Schneider

{"title":"110 GHz amplifiers based on compact coplanar W-band receiver technology","authors":"N. Schlechtweg, W. Haydl, J. Braunstein, P. Tasker, A. Bangert, W. Reinert, L. Verweyen, H. Massler, J. Seibel, K. Zufle, W. Bronner, T. Fink, A. Hulsmann, P. Hofmann, G. Kaufel, K. Kohler, B. Raynor, J. Schneider","doi":"10.1109/GAAS.1995.528997","DOIUrl":null,"url":null,"abstract":"The potential of coplanar waveguide technology to build compact system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. Very good agreement between the measured and modelled data is achieved up to 120 GHz. A cascode MODFET small signal model working up to above 100 GHz has been developed for predictable MMIC design. Based on an accurate design database, a compact integrated amplifier utilizing cascode circuitry for application in the 100-120 GHz frequency band has been fabricated showing a measured maximum gain of 20 dB at 110 GHz. The gain is comparable to the result of a 2-stage amplifier fabricated using 0.1 /spl mu/m gate PHEMTs, while the chip size is reduced by more than 50%.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

Abstract

The potential of coplanar waveguide technology to build compact system modules is demonstrated by means of passive and active MMIC components. The realized passive structures comprise a Wilkinson combiner/divider and a capacitively loaded ultra miniature branch line coupler. Very good agreement between the measured and modelled data is achieved up to 120 GHz. A cascode MODFET small signal model working up to above 100 GHz has been developed for predictable MMIC design. Based on an accurate design database, a compact integrated amplifier utilizing cascode circuitry for application in the 100-120 GHz frequency band has been fabricated showing a measured maximum gain of 20 dB at 110 GHz. The gain is comparable to the result of a 2-stage amplifier fabricated using 0.1 /spl mu/m gate PHEMTs, while the chip size is reduced by more than 50%.

查看原文本刊更多论文

基于紧凑共面w波段接收技术的110 GHz放大器

通过无源和有源MMIC器件，展示了共面波导技术构建紧凑型系统模块的潜力。所实现的无源结构包括威尔金森合成器/分频器和电容负载的超小型分支线耦合器。在120 GHz频段内，实测数据与模型数据非常吻合。针对可预测MMIC设计，开发了一种工作频率在100ghz以上的级联调制场效应管小信号模型。基于精确的设计数据库，设计了一种适用于100-120 GHz频段的级联电路集成放大器，在110 GHz时测量到的最大增益为20 dB。增益与使用0.1 /spl mu/m栅极phemt制造的2级放大器的结果相当，而芯片尺寸减少了50%以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

自引率

0.00%

发文量