Piezoresistive pressure sensor with dual-unit configuration for on-chip self-compensation and suppression of temperature drift

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Pub Date : 2013-06-16 DOI:10.1109/TRANSDUCERS.2013.6627129

J. C. Wang, X. Xia, H. Zou, F. Song, Xinxin Li

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引用次数: 7

Abstract

With our developed MIS (Microholes Inter-etch & Sealing) micromachining process that is implemented only from the front-side of single-side polished (111) silicon wafers, a novel piezoresistive pressure sensing unit and another identically structured pressure-insensitive dummy unit are on-chip integrated compactly to eliminate unbalance factors induced temperature-drift by mutual compensation between the two units. In addition, the two units are both suspended from silicon substrate to suppress the packaging-stress. The high-performance pressure sensors are low-cost fabricated in a single (111)-wafer by repeatedly using the single-sided MIS process. The tested ultra-low TCO (temperature coefficient of offset) of 0.002%/°C·FS (-40°C to +125°C) well verifies the highly stable performance of the developed sensor structure.

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压阻式压力传感器具有双单元配置，用于片上自补偿和抑制温度漂移

我们开发的MIS (Microholes interetch & sealed)微加工工艺仅从单面抛光(111)硅片的正面实施，一种新型的压阻式压力传感单元和另一种结构相同的压力不敏感虚拟单元被紧凑地集成在片上，通过两个单元之间的相互补偿来消除不平衡因素引起的温度漂移。此外，这两个单元都悬浮在硅衬底上以抑制封装应力。通过重复使用单面MIS工艺，在单(111)晶圆中低成本制造高性能压力传感器。经测试的超低TCO(偏移温度系数)为0.002%/°C·FS(-40°C至+125°C)，很好地验证了所开发传感器结构的高稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)

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