A W-band VCO using center-tapped basic inductor in 65nm CMOS

Jongsuk Lee, Yong Moon
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引用次数: 2

Abstract

A W-band voltage controlled oscillator (VCO) is implemented using 65nm CMOS process. The proposed VCO uses center-tapped inductor modified from basic structure and has high Q-factor. Inductor based LC type topology has many advantages compared with transmission line or waveguide. Also low cost CMOS process has many advantages than other processes. The designed VCO operates at 77.52~79.33GHz. The phase noise at 1MHz and 10MHz offset of 78GHz carrier are -81.6dBc/Hz and -102dBc/Hz respectively. Supply voltage is 0.9V and power consumption is 2.97mW. The chip area is 0.12×0.20mm2 and output power is -20.04dBm. Calculated FOM is -175.27dB.
一种采用65nm CMOS中心抽头基本电感的w波段压控振荡器
采用65nm CMOS工艺实现了w波段压控振荡器(VCO)。该压控振荡器采用在基本结构基础上改进的中心抽头电感,具有较高的q因子。基于电感的LC型拓扑结构与传输线或波导相比具有许多优点。此外,低成本的CMOS工艺比其他工艺有许多优点。设计的压控振荡器工作频率为77.52~79.33GHz。78GHz载波1MHz和10MHz偏移处的相位噪声分别为-81.6dBc/Hz和-102dBc/Hz。供电电压0.9V,功耗2.97mW。芯片面积为0.12×0.20mm2,输出功率为-20.04dBm。计算FOM为-175.27dB。
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