{"title":"A W-band VCO using center-tapped basic inductor in 65nm CMOS","authors":"Jongsuk Lee, Yong Moon","doi":"10.1109/ISOCC.2013.6864003","DOIUrl":null,"url":null,"abstract":"A W-band voltage controlled oscillator (VCO) is implemented using 65nm CMOS process. The proposed VCO uses center-tapped inductor modified from basic structure and has high Q-factor. Inductor based LC type topology has many advantages compared with transmission line or waveguide. Also low cost CMOS process has many advantages than other processes. The designed VCO operates at 77.52~79.33GHz. The phase noise at 1MHz and 10MHz offset of 78GHz carrier are -81.6dBc/Hz and -102dBc/Hz respectively. Supply voltage is 0.9V and power consumption is 2.97mW. The chip area is 0.12×0.20mm2 and output power is -20.04dBm. Calculated FOM is -175.27dB.","PeriodicalId":129447,"journal":{"name":"2013 International SoC Design Conference (ISOCC)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2013.6864003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A W-band voltage controlled oscillator (VCO) is implemented using 65nm CMOS process. The proposed VCO uses center-tapped inductor modified from basic structure and has high Q-factor. Inductor based LC type topology has many advantages compared with transmission line or waveguide. Also low cost CMOS process has many advantages than other processes. The designed VCO operates at 77.52~79.33GHz. The phase noise at 1MHz and 10MHz offset of 78GHz carrier are -81.6dBc/Hz and -102dBc/Hz respectively. Supply voltage is 0.9V and power consumption is 2.97mW. The chip area is 0.12×0.20mm2 and output power is -20.04dBm. Calculated FOM is -175.27dB.