G. Hiblot, Q. Rafhay, L. Gaben, G. Ghibaudo, F. Boeuf
{"title":"Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR","authors":"G. Hiblot, Q. Rafhay, L. Gaben, G. Ghibaudo, F. Boeuf","doi":"10.1109/ESSDERC.2015.7324759","DOIUrl":null,"url":null,"abstract":"In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.","PeriodicalId":332857,"journal":{"name":"2015 45th European Solid State Device Research Conference (ESSDERC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 45th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.