Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

G. Hiblot, Q. Rafhay, L. Gaben, G. Ghibaudo, F. Boeuf
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引用次数: 2

Abstract

In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.
基于MASTAR的三极管-绝缘子MOSFET宽高比优化
在这项工作中,利用MASTAR平台研究了绝缘体上三极管MOSFET器件的优化设计,重点是沟道宽高比。首先,描述了MAS-TAR三角模型,并通过TCAD仿真对新组件进行了验证。使用该模型的verilog-A实现,随后对逆变器链进行SPICE仿真,采用不同的功耗降低技术来分析器件性能。最后,通过6T SRAM单元的蒙特卡罗模拟解决了可变性问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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