Efficient and reliable NAND flash channel for high-speed solid state drives

2018 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 2018-04-02 DOI:10.23919/ELINFOCOM.2018.8330553

Joohyeong Yoon, Won Seob Jeong, Won Jeon, W. Ro

引用次数: 3

Abstract

Current generation NAND Flash Memories (NFMs) focused on optimizing data transfer time. However, depends on our analysis, the proportion of control overhead in channel efficiency has increased by up to 30.1%. By increasing the transmission rate of the control signals, it is possible to improve I/O bandwidth of NFM by 11.6%. However, this method can lead to reliability problems. Thus, we propose error detection schemes in order to compensate the reliability of the control signals. Experimental results show that the proposed scheme can improve the I/O bandwidth by about 11.1% and have a reliability for burst errors.

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高效可靠的NAND闪存通道，用于高速固态硬盘

当前一代NAND闪存(nfm)专注于优化数据传输时间。然而，根据我们的分析，控制开销在通道效率中的比例增加了30.1%。通过提高控制信号的传输速率，可以使NFM的I/O带宽提高11.6%。然而，这种方法可能导致可靠性问题。因此，我们提出了错误检测方案，以补偿控制信号的可靠性。实验结果表明，该方案可将I/O带宽提高约11.1%，并具有可靠的突发错误处理能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 International Conference on Electronics, Information, and Communication (ICEIC)

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