Low-leakage repeaters for NoC interconnects

A. Morgenshtein, I. Cidon, R. Ginosar, A. Kolodny
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引用次数: 17

Abstract

Several low-leakage repeater circuits for network-on-chip (NoC) interconnects are presented and analyzed for various utilization rates. The recently proposed staggered-Vt (SVT) repeater is compared with the novel dual-Vt domino (DTD) repeaters and sleep repeaters (SR). These circuits are compared with standard low-Vt (LVT) repeaters in a 32-bit link. Up to 70% and 61% power reduction was obtained in SVT and DTD repeaters, respectively. DTD repeaters are the most area-efficient ones, showing 40% reduction in total area of repeaters. Sleep repeaters are most area-consuming and less effective in high and moderate utilization rates, but comparable to SVT in terms of power for utilization rates below 2%, showing 72% power reduction.
用于NoC互连的低泄漏中继器
介绍了几种用于片上网络互连的低泄漏中继器电路,并对其利用率进行了分析。将新提出的交错vt中继器与新型双vt多米诺骨牌中继器(DTD)和睡眠中继器(SR)进行了比较。将这些电路与32位链路中的标准低vt (LVT)中继器进行比较。在SVT和DTD中继器中分别获得高达70%和61%的功率降低。DTD中继器是面积效率最高的中继器,可以将中继器的总面积减少40%。在高利用率和中等利用率下,睡眠中继器消耗的面积最大,效率较低,但在利用率低于2%的情况下,其功耗与SVT相当,可降低72%的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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