Thickness optimization for Intercalation doped Multilayer Graphene Nanoribbon Interconnects

B. Kumari, Manodipan Sahoo
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引用次数: 1

Abstract

In this paper, thickness of Multilayer Graphene Nanoribbon (MLGNR) interconnects is optimized by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11nm technology node by utilizing the ABCD parameter based model. It is observed that the optimum thickness by minimizing the crosstalk induced delay is 15 nm and 30 nm for perfectly and nearly specular (i.e specularity index, P=1 and 0.8 respectively) intermediate and global level MLGNR interconnects respectively. As far as noise contribution is considered, completely and nearly specular MLGNRs have better immunity to noise when their thickness is less than 15 nm and 175 nm for intermediate and global level respectively. When compared to Cu, fully and nearly specular MLGNRs outperform Cu in terms of delay, noise width and noise area for both intermediate and global level but in terms of peak noise Cu is better than MLGNRs.
掺杂多层石墨烯纳米带互连层厚度优化
本文利用基于ABCD参数的模型,通过最小化11nm技术节点的中间级和全局级互连的串扰延迟和噪声参数,对MLGNR互连的厚度进行了优化。结果表明,对于完全和近似镜面(即镜面指数P=1和0.8)的中间和全局级MLGNR互连,最小化串扰诱导延迟的最佳厚度分别为15 nm和30 nm。在噪声贡献方面,完全镜面mlgnr和近镜面mlgnr在中间和全局厚度分别小于15 nm和175 nm时具有较好的抗噪声能力。与Cu相比,全镜面和近镜面mlgnr在中间和全局水平上的延迟、噪声宽度和噪声面积都优于Cu,但在峰值噪声方面Cu优于mlgnr。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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