Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V

Abstract

The charge trapping characteristics in the silicon nitride (SiN) film were comprehensively studied by using dynamic CV technique with charge centroid analysis under various temperatures. We found two types of hole traps with short (long) time constant which capture holes at low (high) electric field. Traps with time constant down to 10 $\mu \mathrm{s}$ can be detected thanks to dynamic CV. For each kind of traps, the trapped charge density, spatial position, and the activation energy of de-trapping process are clarified, which are essential to understand the reliability issues of charge-trap memory devices.