PbTeThin Films Grown by PLD Method

Y. Tur, I. Virt, S. Adamiak, B. Cieniek, I. Lopatynskyi, M. Frugynskyi
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Abstract

In this paper, we report on the structural, mechanical and electrical properties of nanocryst alline lead telluride thin films as a n- and p- type semiconductor deposited on glass substrates at different temperature PLD method. The structure and morphology of the films are characterized by means of X-ray diffractions (XRD) patterns, scanning electron microcopy (SEM).
用PLD法生长pbte2薄膜
本文报道了在不同温度下用PLD方法在玻璃衬底上沉积n型和p型半导体碲化铅纳米晶薄膜的结构、力学和电学性能。利用x射线衍射(XRD)和扫描电镜(SEM)对膜的结构和形貌进行了表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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