{"title":"Low temperature recombination lifetime in Si MOSFET's","authors":"B. Zetterlund, A. Steckl","doi":"10.1109/IEDM.1980.189815","DOIUrl":null,"url":null,"abstract":"The recombination lifetime, τ<inf>r</inf>, has been measured at low temperature in Si p-MOSFET's using charge pumping. Measurements were performed over the 40-300°K range. A monotonically increasing lifetime with decreasing temperature was measured. τ<inf>r</inf>was found to be proportional to exp(A<inf>r</inf>/kT), where A<inf>r</inf>is a constant determined from the slope of lnτ vs. l/T. For a typical MOSFET the lifetime ranged from 0.08 µs at 300°K to 0.37 ms at 100°K. The value of A<inf>r</inf>in this case was determined to be 106 meV.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The recombination lifetime, τr, has been measured at low temperature in Si p-MOSFET's using charge pumping. Measurements were performed over the 40-300°K range. A monotonically increasing lifetime with decreasing temperature was measured. τrwas found to be proportional to exp(Ar/kT), where Aris a constant determined from the slope of lnτ vs. l/T. For a typical MOSFET the lifetime ranged from 0.08 µs at 300°K to 0.37 ms at 100°K. The value of Arin this case was determined to be 106 meV.
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