{"title":"The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM","authors":"M. Miura-Mattausch, H. Mattausch, T. Ezaki","doi":"10.1142/6159","DOIUrl":null,"url":null,"abstract":"Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Noise Models Non-Quasi-Static (NQS) Model Leakage Currents Source/Bulk and Drain/Bulk Diode Models Source/Drain Resistances Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies Summary of Model Equations Exclusion of Modeled Effects and Model Flags.","PeriodicalId":256342,"journal":{"name":"International Series on Advances in Solid State Electronics and Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"93","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Series on Advances in Solid State Electronics and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/6159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 93
Abstract
Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Noise Models Non-Quasi-Static (NQS) Model Leakage Currents Source/Bulk and Drain/Bulk Diode Models Source/Drain Resistances Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies Summary of Model Equations Exclusion of Modeled Effects and Model Flags.