{"title":"A novel design of all optical AND gate based on 2-D photonic crystal","authors":"A. Macker, A. Shukla, V. P. Dubey","doi":"10.1109/ICETCCT.2017.8280329","DOIUrl":null,"url":null,"abstract":"The paper proposes the design of logical AND gate based on two-dimensional photonic crystals. The proposed structure is having the size of 18μm×18μm in which Si rods are placed in air. Line and point defects are created to achieve the functionality of logical AND gate. A 32-bit simulation is carried out using the finite difference time domain (FDTD) and plane wave expansion (PWE) methods to simulate the proposed structure. A forbidden gap of 0.31276 in the range of 0.735940 ≤ (1/λ) ≤ 1.048702 has been obtained for Transverse Electric (TE) mode at 1550 nm wavelength. A reasonable contrast ratio (CR) of 7.62dB is obtained for the designed structure of AND gate.","PeriodicalId":436902,"journal":{"name":"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETCCT.2017.8280329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The paper proposes the design of logical AND gate based on two-dimensional photonic crystals. The proposed structure is having the size of 18μm×18μm in which Si rods are placed in air. Line and point defects are created to achieve the functionality of logical AND gate. A 32-bit simulation is carried out using the finite difference time domain (FDTD) and plane wave expansion (PWE) methods to simulate the proposed structure. A forbidden gap of 0.31276 in the range of 0.735940 ≤ (1/λ) ≤ 1.048702 has been obtained for Transverse Electric (TE) mode at 1550 nm wavelength. A reasonable contrast ratio (CR) of 7.62dB is obtained for the designed structure of AND gate.