The size limit of Al/Ni multilayer rectangular cuboids for generating self-propagating exothermic reaction on a Si wafer

S. Ito, S. Inoue, T. Namazu
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引用次数: 4

Abstract

In this study, the size limit of Al/Ni nano-multilayered rectangular cuboids for the self-propagation of their exothermic reaction on a Si wafer was investigated. After Al/Ni multilayer films were deposited on a Si wafer, micro-sized rectangular cuboids were formed from the films using focused ion beam. By applying a small spark to the cuboids, we have tried to make them exothermic reaction. As the result, both of reacted and unreacted cuboids were found. In the cuboids with higher aspect ratio and smaller one-side length, the reaction easily occurred. The cause of the size effect was discussed in the viewpoint of thermal conductivity of a Si substrate.
Al/Ni多层矩形长方体在硅晶片上产生自扩散放热反应的尺寸极限
本文研究了Al/Ni纳米多层矩形长方体在硅片上自扩散放热反应的尺寸极限。在硅晶片上沉积Al/Ni多层膜后,利用聚焦离子束形成了微尺寸的长方体。通过在长方体上施加一个小火花,我们试图使它们发生放热反应。结果发现了反应长方体和未反应长方体。长径比大、单侧长度小的长方体容易发生反应。从硅衬底导热的角度讨论了尺寸效应产生的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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