Proposal of Vertical-channel Fin-SiC MOSFET toward Future Device Scaling

Abstract

We propose a new SiC trench MOSFET suitable for achieving both low loss and high reliability. This structure, called a VC Fin-SiC, is characterized by a fin-shaped trench, and by adopting a wide channel formed on the sidewall of the fin and a narrow JFET with high dopant concentration, it achieves both low on-resistance and high reliability. In this work, these design concepts are verified through simulation and actual device fabrication. Because the VC Fin-SiC has channels directly above the JFET structure, the performance can be easily improved by scaling the fin-pitch and channel length, and it will be one of the most promising structures in the future.