Conductive polymer bump interconnects

Jong-Kai Lin, J. Drye, W. Lytle, T. Scharr, R. Subrahmanyan, Ranjan Sharma
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引用次数: 20

Abstract

Conductive polymer bonded flip chip interconnect systems can provide an attractive alternative flip chip technology in terms of cost and manufacturability. This work examines the feasibility of application of such a technology. A mathematical model for stencil printing of conductive adhesive paste is developed to demonstrate some of the factors affecting the print quality. Designed experiments is used to optimize bump dimensional uniformity. The electrical performance of conductive polymer flip chip interconnects is evaluated through both GaAs and Si devices. The microwave insertion loss (S/sub 21/) of a coplanar waveguide test vehicle showed a loss rate of 0.031 dB/GHz for non-underfilled flip chip assembly and 0.065 dB/GHz for those with underfill encapsulation. These S/sub 21/ data are almost identical to a device with same test structure and a Au ball bumped flip chip assembly. Additional test using a CT-2 antenna switch GaAs device flip chip bonded on a FR4 board showed an identical performance (up to 2 GHz frequency) to the same assembly using Au-Sn eutectic bumps. Reliability of conductive polymer bumps was evaluated using Si die flip chip bonded on FR4 substrates. Results showed no failures on temperature cycle, humidity, vibration, and mechanical shock tests. There were 8.6% failures on HAST and 6% failures on thermal shock tests on test conditions stated in the text.
导电聚合物凹凸互连
导电聚合物键合倒装芯片互连系统在成本和可制造性方面提供了一种有吸引力的替代倒装芯片技术。这项工作考察了这种技术应用的可行性。建立了导电胶浆模板印刷的数学模型,分析了影响印刷质量的因素。采用设计实验优化凹凸尺寸均匀性。通过GaAs和Si器件对导电聚合物倒装芯片互连的电学性能进行了评价。共面波导测试车的微波插入损耗(S/sub 21/)显示,未填充倒装芯片的损耗率为0.031 dB/GHz,填充倒装芯片的损耗率为0.065 dB/GHz。这些S/sub 21/数据几乎与具有相同测试结构和Au球碰撞倒装芯片组件的设备相同。在FR4板上使用CT-2天线开关GaAs器件倒装芯片进行的额外测试显示,与使用Au-Sn共晶凸点的相同组件具有相同的性能(高达2 GHz频率)。利用硅晶片倒装芯片结合FR4衬底,对导电聚合物凸点的可靠性进行了评价。结果表明,温度循环、湿度、振动和机械冲击试验均无故障。在文中所述的测试条件下,在HAST测试中有8.6%的失败,在热冲击测试中有6%的失败。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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