Analysis of DC Characteristics of AlGaN/GaN HEMTs: Simulation

Abstract

In this paper, a systematic studies have been performed on the different architectures of AlGaN/GaN high-electron-mobility transistors (HEMTs) through Sentaurus simulation software. The DC characteristics have been investigated for three different architectures of AlGaN/GaN HEMTs (Common Drain, Common Source and Conventional HEMTs). The common drain (CD) AlGaN/GaN HEMT shows the better DC characteristics in comparison to the common source (CS) AlGaN/GaN HEMT and conventional AlGaN/GaN HEMT.