Active Voltage Balancing Embedded Digital Gate Driver for Series-Connected 10 kV SiC MOSFETs

Xiang Lin, L. Ravi, S. Mocevic, D. Dong, R. Burgos
{"title":"Active Voltage Balancing Embedded Digital Gate Driver for Series-Connected 10 kV SiC MOSFETs","authors":"Xiang Lin, L. Ravi, S. Mocevic, D. Dong, R. Burgos","doi":"10.1109/APEC39645.2020.9124263","DOIUrl":null,"url":null,"abstract":"This paper focuses on series connection of 10 kV SiC MOSFETs which enables higher operation voltage of devices for medium voltage application. To minimize switching losses, active voltage balancing for series-connected 10 kV SiC MOSFETs is implemented instead of passive snubbers. For this purpose, a new gate driver is designed for active voltage balancing of two series-connected 10 kV SiC MOSFETs with the following features: 1) miniaturized 10 kV drain-source voltage measurement unit and its interconnection to gate-driver; 2) Tunable gate signal delay time adjustment unit with 0.25 ns resolution; 3) Rogowski current sensing unit for fault current detection. Based on the developed gate driver, the FPGA-based closed-loop gate signal timing control for active voltage balancing and fault protection of series-connected 10 kV SiC MOSFETs are designed in this paper. The proposed gate driver and active voltage balancing method are validated in a phase-leg test achieving 16 kV total blocking voltage.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC39645.2020.9124263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

This paper focuses on series connection of 10 kV SiC MOSFETs which enables higher operation voltage of devices for medium voltage application. To minimize switching losses, active voltage balancing for series-connected 10 kV SiC MOSFETs is implemented instead of passive snubbers. For this purpose, a new gate driver is designed for active voltage balancing of two series-connected 10 kV SiC MOSFETs with the following features: 1) miniaturized 10 kV drain-source voltage measurement unit and its interconnection to gate-driver; 2) Tunable gate signal delay time adjustment unit with 0.25 ns resolution; 3) Rogowski current sensing unit for fault current detection. Based on the developed gate driver, the FPGA-based closed-loop gate signal timing control for active voltage balancing and fault protection of series-connected 10 kV SiC MOSFETs are designed in this paper. The proposed gate driver and active voltage balancing method are validated in a phase-leg test achieving 16 kV total blocking voltage.
用于串联10kv SiC mosfet的有源电压平衡嵌入式数字栅极驱动器
本文重点研究了10kv SiC mosfet的串联连接,使器件的工作电压更高,适用于中压应用。为了最大限度地减少开关损耗,对串联的10 kV SiC mosfet实施有源电压平衡,而不是无源缓冲器。为此,设计了一种新型的栅极驱动器,用于两个串联的10kv SiC mosfet的有源电压平衡,具有以下特点:1)小型化的10kv漏源电压测量单元及其与栅极驱动器的互连;2)可调门信号延迟时间调节单元,分辨率为0.25 ns;3) Rogowski电流传感单元,用于故障电流检测。本文在研制的栅极驱动器的基础上,设计了基于fpga的10 kV SiC mosfet串联有源电压平衡和故障保护的闭环栅极信号定时控制。所提出的栅极驱动器和有源电压平衡方法在相位腿试验中得到验证,总阻断电压达到16 kV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信