Xiang Lin, L. Ravi, S. Mocevic, D. Dong, R. Burgos
{"title":"Active Voltage Balancing Embedded Digital Gate Driver for Series-Connected 10 kV SiC MOSFETs","authors":"Xiang Lin, L. Ravi, S. Mocevic, D. Dong, R. Burgos","doi":"10.1109/APEC39645.2020.9124263","DOIUrl":null,"url":null,"abstract":"This paper focuses on series connection of 10 kV SiC MOSFETs which enables higher operation voltage of devices for medium voltage application. To minimize switching losses, active voltage balancing for series-connected 10 kV SiC MOSFETs is implemented instead of passive snubbers. For this purpose, a new gate driver is designed for active voltage balancing of two series-connected 10 kV SiC MOSFETs with the following features: 1) miniaturized 10 kV drain-source voltage measurement unit and its interconnection to gate-driver; 2) Tunable gate signal delay time adjustment unit with 0.25 ns resolution; 3) Rogowski current sensing unit for fault current detection. Based on the developed gate driver, the FPGA-based closed-loop gate signal timing control for active voltage balancing and fault protection of series-connected 10 kV SiC MOSFETs are designed in this paper. The proposed gate driver and active voltage balancing method are validated in a phase-leg test achieving 16 kV total blocking voltage.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC39645.2020.9124263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
This paper focuses on series connection of 10 kV SiC MOSFETs which enables higher operation voltage of devices for medium voltage application. To minimize switching losses, active voltage balancing for series-connected 10 kV SiC MOSFETs is implemented instead of passive snubbers. For this purpose, a new gate driver is designed for active voltage balancing of two series-connected 10 kV SiC MOSFETs with the following features: 1) miniaturized 10 kV drain-source voltage measurement unit and its interconnection to gate-driver; 2) Tunable gate signal delay time adjustment unit with 0.25 ns resolution; 3) Rogowski current sensing unit for fault current detection. Based on the developed gate driver, the FPGA-based closed-loop gate signal timing control for active voltage balancing and fault protection of series-connected 10 kV SiC MOSFETs are designed in this paper. The proposed gate driver and active voltage balancing method are validated in a phase-leg test achieving 16 kV total blocking voltage.
本文重点研究了10kv SiC mosfet的串联连接,使器件的工作电压更高,适用于中压应用。为了最大限度地减少开关损耗,对串联的10 kV SiC mosfet实施有源电压平衡,而不是无源缓冲器。为此,设计了一种新型的栅极驱动器,用于两个串联的10kv SiC mosfet的有源电压平衡,具有以下特点:1)小型化的10kv漏源电压测量单元及其与栅极驱动器的互连;2)可调门信号延迟时间调节单元,分辨率为0.25 ns;3) Rogowski电流传感单元,用于故障电流检测。本文在研制的栅极驱动器的基础上,设计了基于fpga的10 kV SiC mosfet串联有源电压平衡和故障保护的闭环栅极信号定时控制。所提出的栅极驱动器和有源电压平衡方法在相位腿试验中得到验证,总阻断电压达到16 kV。