{"title":"A new combined local and lateral design technique for increased SOA of large area IGCTs","authors":"T. Stiasny, P. Streit","doi":"10.1109/ISPSD.2005.1487986","DOIUrl":null,"url":null,"abstract":"In this paper we present our newly developed IGCT design concept for increased SOA performance. The new technology consists of a combination of local and lateral design techniques for improved current distribution across large area devices, thereby realizing a new level of SOA capability for IGCT structures.","PeriodicalId":154808,"journal":{"name":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2005.1487986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
In this paper we present our newly developed IGCT design concept for increased SOA performance. The new technology consists of a combination of local and lateral design techniques for improved current distribution across large area devices, thereby realizing a new level of SOA capability for IGCT structures.