Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256809

A. Afzalian, D. Flandre

引用次数: 10

Abstract

The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.

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测量，建模和电模拟横向PIN光电二极管在薄膜soi的高量子效率和高选择性在紫外范围内

本文通过测量、建模和模拟研究了SOI结构，特别是埋藏氧化物的存在对完全耗尽薄膜绝缘体上硅(SOI)横向光电探测器量子效率与波长特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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