W. Richardson, D. Bordelon, G. Pollack, A. Shah, S. Malhi, H. Shichijo, S. Banerjee, M. Elahy, R. Womack, C.-P. Wang, J. Gallia, H. Davis, P. Chatterjee
{"title":"A trench transistor cross-point DRAM cell","authors":"W. Richardson, D. Bordelon, G. Pollack, A. Shah, S. Malhi, H. Shichijo, S. Banerjee, M. Elahy, R. Womack, C.-P. Wang, J. Gallia, H. Davis, P. Chatterjee","doi":"10.1109/IEDM.1985.191075","DOIUrl":null,"url":null,"abstract":"A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.","PeriodicalId":118447,"journal":{"name":"1985 International Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"47","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1985.191075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 47
Abstract
A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
