Comparison of GaN HEMTs Thermal Results through different measurements methodologies: Validation with 3D simulation

Abstract

In this work, thermoreflectance measurement technique is applied to GaN HEMTs transistors, GH15 8x50μm and 6x50μm from the UMS foundry. These measurements are compared to 3D simulation, but also to measurements based on an electrical approach we developed previously in [1]. The good agreement between results and the thermalization time constant proposed in [2] for GaN HEMTs validate finally all our approach dedicated to thermal resistance or thermal time constant