MOCVD growth of carbon-doped InGaAs layers using ethyl-base metal organic materials

H. Yokohama, K. Shiojima, G. Araki
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Abstract

Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.
利用乙基金属有机材料MOCVD生长碳掺杂InGaAs层
采用乙基金属有机材料和脉冲掺杂技术进行了掺c p-InGaAs外延生长。与三甲基lindium相比,三乙基lindium的In供应比与In含量呈线性关系,且生长温度变化较小。用CBr4脉冲掺杂C可显著抑制金属有机材料的消耗。结果表明,CBr4流动掺杂C具有良好的可控性,载流子密度高达1.4 × 1019 cm-3。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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