Simplified Multi-time Scale Thermal Model Considering Thermal Coupling in IGBT Modules

Yi Zhang, Huai Wang, Zhongxu Wang, F. Blaabjerg
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引用次数: 14

Abstract

In the reliability evaluation of power electronic systems, one of the challenges is to model the thermal profiles across multiple time scales, i.e., from switching cycles at nano-or micro-seconds to annual or even longer-time mission profiles. Without consideration of the dissimilarity of thermal behaviors under different time scales, a single thermal model usually leads to either considerable modeling errors or heavy computational burden. Based on the frequency response of thermal impedances, this paper proposes a novel and simplified thermal model to analyze mission profiles with multiple time scales. It enables a computational-efficient thermal stress analysis for power semiconductors, including the thermal coupling in device packages. The theoretical results are verified by experimental testing.
考虑IGBT模块热耦合的简化多时间尺度热模型
在电力电子系统的可靠性评估中,其中一个挑战是建立多个时间尺度的热分布模型,即从纳米或微秒的切换周期到每年甚至更长时间的任务分布。如果不考虑不同时间尺度下热行为的差异性,单一的热模型要么建模误差大,要么计算量大。基于热阻抗的频率响应,提出了一种新的简化热模型,用于多时间尺度任务剖面分析。它可以对功率半导体进行计算效率高的热应力分析,包括器件封装中的热耦合。通过实验验证了理论结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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