Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558943

N. Tega, H. Miki, Masanao Yamaoka, Hitoshi Kume, T. Mine, Takeshi Ishida, Y. Mori, Renichi Yamada, K. Torii

{"title":"Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM","authors":"N. Tega, H. Miki, Masanao Yamaoka, Hitoshi Kume, T. Mine, Takeshi Ishida, Y. Mori, Renichi Yamada, K. Torii","doi":"10.1109/RELPHY.2008.4558943","DOIUrl":null,"url":null,"abstract":"The impact of a random telegraph noise (RTN) on a scaled-down SRAM is shown for the first time. To estimate the impact on SRAM, we statistically analyzed a threshold voltage fluctuation (DeltaVth) of n-and p-MOSFETs. It is revealed that DeltaVth of the p-MOSFET is larger than that of the n-MOSFET. This difference can be explained by considering the followings: (i) number- and mobility-fluctuation models of RTN (ii) the difference in the capture cross section between electron and hole. In addition, based on these results, SRAM margin enclosed by read / write Vth curves with or without RTN was simulated. We consequently found that Vth margin comes close to Vth window of the SRAM by considering the effect of RTN on DeltaVth, even at hp 65. Moreover, DeltaVth due to RTN of the p-MOSFET is comparable with DeltaVth due to the random dopant fluctuation (RDF) at hp 45 because DeltaVth due to the RDF is inversely proportional to square root of the gate area (S), while DeltaVth due to RTN is inversely proportional to S.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"84","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 84

Abstract

The impact of a random telegraph noise (RTN) on a scaled-down SRAM is shown for the first time. To estimate the impact on SRAM, we statistically analyzed a threshold voltage fluctuation (DeltaVth) of n-and p-MOSFETs. It is revealed that DeltaVth of the p-MOSFET is larger than that of the n-MOSFET. This difference can be explained by considering the followings: (i) number- and mobility-fluctuation models of RTN (ii) the difference in the capture cross section between electron and hole. In addition, based on these results, SRAM margin enclosed by read / write Vth curves with or without RTN was simulated. We consequently found that Vth margin comes close to Vth window of the SRAM by considering the effect of RTN on DeltaVth, even at hp 65. Moreover, DeltaVth due to RTN of the p-MOSFET is comparable with DeltaVth due to the random dopant fluctuation (RDF) at hp 45 because DeltaVth due to the RDF is inversely proportional to square root of the gate area (S), while DeltaVth due to RTN is inversely proportional to S.

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随机电报噪声引起的阈值电压波动对缩小SRAM的影响

本文首次展示了随机电报噪声(RTN)对按比例缩小的SRAM的影响。为了估计对SRAM的影响，我们统计分析了n-和p- mosfet的阈值电压波动(DeltaVth)。结果表明，p型mosfet的DeltaVth大于n型mosfet。这种差异可以通过考虑以下因素来解释:(i) RTN的数量和迁移率波动模型(ii)电子和空穴之间捕获截面的差异。此外，基于这些结果，模拟了有或没有RTN的读/写Vth曲线所包围的SRAM余量。因此，我们发现，通过考虑RTN对DeltaVth的影响，即使在hp 65时，Vth裕度也接近SRAM的Vth窗口。此外，p-MOSFET的RTN引起的DeltaVth与hp 45下随机掺杂波动(RDF)引起的DeltaVth相当，因为RDF引起的DeltaVth与栅极面积(S)的平方根成反比，而RTN引起的DeltaVth与S成反比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 IEEE International Reliability Physics Symposium

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