On the RESET-SET transition in Phase Change Memories

Abstract

We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.