Analysis and approach of TSV-based hierarchical power distribution networks for estimating 1st-Droop and resonant noise in 3DIC

G. Charles, P. Franzon, Jaemin Kim, Alex Levin
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引用次数: 2

Abstract

In this paper, we model and analyse a hierarchical TSV-based chip-package co-design of the power delivery network (PDN) for three-dimensional integrated circuits (3DICs). It is a significant design consideration to combine chip/package PDN structures, accurately characterize and quantify their overall impedance, 1st-droop effect and resonant noise behaviour for multi-stacked chips. To better understand how to reduce noise, particularly simultaneous switching noise (SSN) and determine voltage drop impact on power delivery networks for 3DICs, an analytical model is enhanced and applied to estimate the different noise levels of hierarchical TSV-based PDN structures. The on-chip parasitic capacitances and intentionally added decoupling capacitors help counter any Ldi/dt variations from the power supply rails as a result of the inductive effects in TSVs. With technology interest in embedded applications, the hierarchical chip-package TSV-based PDN design is modeled after a multi-stacked memory subsystem, a silicon interposer and package structure. A segmentation-based method is used to calculate the overall impedance of the hierarchical PDN system. An analytical expression is modified and used to quantify the transient response characteristics of 1st-droop and resonant noise property.
基于tsv的分层配电网络一阶下垂和谐振噪声估计分析与方法
在本文中,我们建模和分析了一种基于分层tsv的三维集成电路(3dic)供电网络(PDN)的芯片封装协同设计。结合芯片/封装PDN结构,准确表征和量化其整体阻抗、一阶下垂效应和多堆叠芯片的谐振噪声行为是一个重要的设计考虑因素。为了更好地了解如何降低噪声,特别是同时开关噪声(SSN),并确定压降对3dic输电网络的影响,本文改进了一个分析模型,并应用于估计基于tsv的分层PDN结构的不同噪声水平。片上寄生电容和有意添加的去耦电容有助于抵消tsv中电感效应导致的电源导轨的任何Ldi/dt变化。基于嵌入式应用的技术兴趣,基于tsv的分层芯片封装PDN设计采用多堆叠存储子系统、硅中间层和封装结构为模型。采用基于分段的方法计算分层PDN系统的总阻抗。对解析式进行了改进,并用于量化一阶下垂的瞬态响应特性和谐振噪声特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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