SiP for GSM/EDGE in CMOS technology

Abstract

The development in the field of RF and baseband (BB) integration in nanoscale CMOS technology for cellular systems over the last recent years has shown significant progress. The successful integration of the RF transceiver with digital baseband processor enables mobile phone manufacturer to build ultra-low cost phones for GSM/GPRS in CMOS technology. This trend towards continuous system integration for mobile phones with an advanced feature set providing high data rate communication, multimedia and camera capabilities. The support of various features requires a system solution including the power-management unit (PMU) with highly efficient DC-DC converters to reduce the overall power consumption. However, this imposes a major challenge for the integration of the RF due to crosstalk and thermal heating effects caused by the PMU and BB part.