Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits

Abstract

Here we consider the prospects for continued improvement in InP HBTs, specifically the challenges faced in a further doubling of transistor and IC bandwidth. Our objective is an IC technology supporting 300 GHz digital clock rates, -600 GHz reactively-tuned amplifiers, and balanced cutoff frequencies in the 700-1000 GHz range. Such ICs would permit monolithic transceivers for 300 GHz and 600 GHz imaging systems, -250 GHz high-rate communications radios, chip sets for 300 Gb/s optical data transmission, and very high-resolution microwave mixed-signal ICs.