The design of logic gates using Single Electron Box (SEB) Nano-Devices

Abstract

The Single Electron Box (SEB) is the basic functional Single Electron Nano-Devices (SENDs). In this paper, a detailed analysis of the SEB basic operation is reviewed. The SEB with extra input capacitors is presented with adjusted parameters so as to get same digital levels for both inputs and outputs. Both NOT and NAND logic gates followed by a double-inverter stage are proposed. The detailed schematic diagrams along with the corresponding simulation results (using SIMON 2.0) of these SEB logic gates are included.