Electromigration induced stress in open TSVs

Abstract

A study of electromigration in open through silicon vias (TSVs) is presented. The calculations are based on the drift-diffusion model for electromigration combined with mechanical simulations. The results show that the highest stresses are located at the aluminium/tungsten interfaces, near the region where the electrical current is introduced into the TSV, which happens to be the location of the highest current density at the interface there, the electromigration induced degradation, e.g. void nucleation, is most probable to occur.