Investigation of the Efficiency of CsGeI3-based solar cell using SCAPS-1D modeling and simulation

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032870

Abhijit Das, D. P. Samajdar, Babban Kumar Ravidas

{"title":"Investigation of the Efficiency of CsGeI3-based solar cell using SCAPS-1D modeling and simulation","authors":"Abhijit Das, D. P. Samajdar, Babban Kumar Ravidas","doi":"10.1109/EDKCON56221.2022.10032870","DOIUrl":null,"url":null,"abstract":"This paper proposes a fully lead (Pb)-free CsGeI<inf>3</inf>-based Perovskite Solar Cell (PSC) modeled and simulated using Solar cell Capacitance Simulator-1D (SCAPS-1D). With this heterojunction structure, an improved power conversion efficiency (PCE) of about 19.30% has been obtained. PCBM and P3HT are used as electron transfer layer (ETL) and hole transfer layer (HTL) respectively. The effect of change of acceptor density and defect density with the absorber layer thickness has been studied theoretically in this paper. The optimized thickness of the absorber layer is found out to be 1.4 and best values of photovoltaic parameters are obtained for an acceptor density of 5×1017 cm-3 and defect density of 1014 cm-3. The final photovoltaic performance for the solar cell structure of glass/FTO/PCBM/CsGeI<inf>3</inf>/P3HT/Ag are as follow: J<inf>SC</inf> = 25 mA/cm2, V<inf>OC</inf> = 1.060 V, PCE = 19.30%, FF = 87.40%.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"362 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

This paper proposes a fully lead (Pb)-free CsGeI3-based Perovskite Solar Cell (PSC) modeled and simulated using Solar cell Capacitance Simulator-1D (SCAPS-1D). With this heterojunction structure, an improved power conversion efficiency (PCE) of about 19.30% has been obtained. PCBM and P3HT are used as electron transfer layer (ETL) and hole transfer layer (HTL) respectively. The effect of change of acceptor density and defect density with the absorber layer thickness has been studied theoretically in this paper. The optimized thickness of the absorber layer is found out to be 1.4 and best values of photovoltaic parameters are obtained for an acceptor density of 5×10¹⁷ cm^-3 and defect density of 10¹⁴ cm^-3. The final photovoltaic performance for the solar cell structure of glass/FTO/PCBM/CsGeI3/P3HT/Ag are as follow: JSC = 25 mA/cm², VOC = 1.060 V, PCE = 19.30%, FF = 87.40%.

查看原文本刊更多论文

基于SCAPS-1D建模与仿真的csgei3基太阳能电池效率研究

本文提出了一种完全无铅(Pb)的基于csgei3的钙钛矿太阳能电池(PSC)，利用太阳能电池电容模拟器- 1d (SCAPS-1D)对其进行建模和仿真。在这种异质结结构下，功率转换效率提高了约19.30%。采用PCBM和P3HT分别作为电子转移层(ETL)和空穴转移层(HTL)。本文从理论上研究了受体密度和缺陷密度随吸收层厚度变化的影响。当接收层密度为5×1017 cm-3、缺陷密度为1014 cm-3时，吸收层的最佳厚度为1.4，光伏参数最优。玻璃/FTO/PCBM/CsGeI3/P3HT/Ag太阳能电池结构的最终光伏性能为:JSC = 25 mA/cm2, VOC = 1.060 V, PCE = 19.30%， FF = 87.40%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

自引率

0.00%

发文量